activity
20212026
most citedTuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

2 citations · 4 across the 12 of their papers we have counts for

collaborators

16 papers

cs.AR2026

Understanding the Power Consumption of Modern High Bandwidth Memory: Experimental Analysis and Modeling Using Real HBM2 DRAM Chips

Ataberk Olgun, Spiros Galanopoulos, Andreas Kosmas Kakolyris +4

We perform the first comprehensive experimental characterization of power consumed by real HBM2 DRAM chips. Our extensive characterization yields 1) the empirical basis for develop…

cs.CR2026

MORDOR: Mitigating Overheads of Read Disturbance Preventive Operations via Elastic Refresh Scheduling

Maria Makeenkova, Ataberk Olgun, F. Nisa Bostancı +3

Modern DRAM chips are susceptible to read disturbance phenomena such as RowHammer, where repeatedly accessing (hammering) a row of DRAM cells (i.e., a DRAM row) induces bitflips in…

cs.AR2026

Terracotta: Enabling the Adoption of New DRAM Techniques via a Flexible DRAM Interface and Memory Controller

Harsh Songara, Konstantinos Kanellopoulos, F. Nisa Bostancı +6

DRAM continues to limit the performance, energy efficiency, and robustness of modern systems. Many prior works propose DRAM techniques that support in-DRAM computation, improve mem…

cs.AR2026

Demystifying DRAM Read Disturbance: Bridging the Gap Between Experimental Characterization and Device-Level Modeling of RowHammer and RowPress Phenomena

Haocong Luo, Longda Zhou, Ataberk Olgun +5

DRAM read disturbance, like RowHammer and RowPress, is a critical robustness issue where accessing DRAM can cause unintended bitflips in other unaccessed DRAM locations. DRAM read…

cs.AR2026

DejaVu: Why You Should Write to Your DRAM Rows Twice, Carefully

Haocong Luo, İsmail Emir Yüksel, Ataberk Olgun +4

We provide the first experimental demonstration of DejaVu, a phenomenon where the data previously written to DRAM cells affects DRAM's vulnerability to read disturbance. Our experi…

cs.AR2026

PuDGhost: Experimental Analysis of Computation Result Corruption in Processing-using-DRAM Operations on Real DRAM Chips and Implications for Future Systems

Daichi Tokuda, İsmail Emir Yüksel, Tatsuya Kubo +7

Processing-using-DRAM (PuD) is a promising computation paradigm that alleviates frequent data movement between main memory and processing units by using each DRAM column as a compu…

cs.CR2026

ScaleDisturb: Exploiting Temporal Asymmetry to Amplify Read Disturbance in Modern DRAM Chips

Jikun Wang, Haocong Luo, Ataberk Olgun +6

DRAM suffers from read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or continuously keeping open a DRAM row (aggressor row) induces bitflips in…

cs.AR2025

Harmonia: Enhancing Data Placement and Migration in Hybrid Storage Systems via Multi-Agent Reinforcement Learning

Rakesh Nadig, Vamanan Arulchelvan, Rahul Bera +7

Modern high-performance computing (HPC) environments rely on hybrid storage systems (HSS) that combine multiple storage devices with diverse latency, bandwidth, endurance, and capa…

cs.CR2025

Understanding and Mitigating Covert Channel and Side Channel Vulnerabilities Introduced by RowHammer Defenses

F. Nisa Bostancı, Oğuzhan Canpolat, Ataberk Olgun +5

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attack…

cs.AR2025

Understanding RowHammer Under Reduced Refresh Latency: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions

Yahya Can Tuğrul, A. Giray Yağlıkçı, İsmail Emir Yüksel +6

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victi…

cs.CR2025

Chronus: Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance

Oğuzhan Canpolat, A. Giray Yağlıkçı, Geraldo F. Oliveira +6

We 1) present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Countin…

cs.AR2024★ 1 cited

An Experimental Characterization of Combined RowHammer and RowPress Read Disturbance in Modern DRAM Chips

Haocong Luo, Ismail Emir Yüksel, Ataberk Olgun +3

DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different…

cs.CR2024

Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions

Abdullah Giray Yağlıkçı, Yahya Can Tuğrul, Geraldo F. Oliveira +4

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHa…

cs.AR2024★ 1 cited

Functionally-Complete Boolean Logic in Real DRAM Chips: Experimental Characterization and Analysis

Ismail Emir Yuksel, Yahya Can Tugrul, Ataberk Olgun +7

Processing-using-DRAM (PuD) is an emerging paradigm that leverages the analog operational properties of DRAM circuitry to enable massively parallel in-DRAM computation. PuD has the…

cs.AR2022★ 2 cited

TuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

İsmail Emir Yüksel, Ataberk Olgun, Behzad Salami +6

Prior works propose SRAM-based TRNGs that extract entropy from SRAM arrays. SRAM arrays are widely used in a majority of specialized or general-purpose chips that perform the compu…

cs.AR2021

MoRS: An Approximate Fault Modelling Framework for Reduced-Voltage SRAMs

İsmail Emir Yüksel, Behzad Salami, Oğuz Ergin +2

On-chip memory (usually based on Static RAMs-SRAMs) are crucial components for various computing devices including heterogeneous devices, e.g., GPUs, FPGAs, ASICs to achieve high p…