activity
20222026
most citedSimulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles

7 citations · 25 across the 12 of their papers we have counts for

collaborators

15 papers

physics.ins-det2026

Review of prototypes developed in a 65 nm CMOS imaging technology in view of vertexing applications at a future lepton collider

Finn King, Matthew Lewis Franks, Yajun He +21

The OCTOPUS project addresses the development and characterization of monolithic active pixel sensors in the TPSCo 65 nm ISC technology in view of vertexing applications at a futur…

physics.ins-det2026★ 1 cited

Constellation: The Autonomous Control and Data Acquisition System for Dynamic Experimental Setups

Simon Spannagel, Stephan Lachnit, Hanno Perrey +13

The operation of instruments and detectors in laboratory or beamline environments presents a complex challenge, requiring stable operation of multiple concurrent devices, often con…

physics.ins-det2025

Characterization of the H2M Monolithic CMOS Sensor

Rafael Ballabriga, Eric Buschmann, Michael Campbell +29

The H2M (Hybrid-to-Monolithic) is a monolithic pixel sensor manufactured in a modified \SI{65}{\nano\meter}~CMOS imaging process with a small collection electrode. Its design addre…

physics.ins-det2025

Impact of the circuit layout on the charge collection in a monolithic pixel sensor

Corentin Lemoine, Rafael Ballabriga, Eric Buschmann +28

CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors fo…

hep-ex2025

TelePix2: Full scale fast region of interest trigger and timing for the EUDET-style telescopes at the DESY II Test Beam Facility

Lennart Huth, Heiko Augustin, Lucas Dittmann +15

With increasing demands by future and current upgrades of particle physics experiments on rate capabilities and time resolution, the requirements on test beams are also increasing.…

physics.ins-det2025

Transient studies using a TCAD and Allpix Squared combination approach

Manuel A. Del Rio Viera, Eric Buschmann, Ankur Chauhan +22

The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density an…

physics.ins-det2025

The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology

Sara Ruiz Daza, Rafael Ballabriga, Eric Buschmann +28

The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensor…

physics.ins-det2024

electronCT -- An Imaging Technique Using Very-high Energy Electrons

Paul Schütze, Aenne Abel, Florian Burkart +12

The electronCT technique is an imaging method based on the multiple Coulomb scattering of relativistic electrons and has potential applications in medical and industrial imaging. I…

physics.ins-det2024★ 7 cited

Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles

Håkan Wennlöf, Dominik Dannheim, Manuel Del Rio Viera +17

The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electro…

physics.ins-det2024

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Gianluca Aglieri Rinella, Giacomo Alocco, Matias Antonelli +91

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise…

physics.ins-det2024★ 4 cited

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Adriana Simancas, Justus Braach, Eric Buschmann +22

Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collecti…

physics.ins-det2023★ 2 cited

Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors

Adriana Simancas, Justus Braach, Eric Buschmann +21

Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in par…

hep-ex2022

Proceedings of the IFJ PAN Particle Physics Summer Student Alumni Conference 2022

Derendarz Dominik, Rafal Staszewski, Maciej Trzebinski +13

IFJ PAN PPSS Alumni Conference is organized by the Institute of Nuclear Physics Polish Academy of Sciences (IFJ PAN). It is addressed to: participants of previous editions of Parti…

physics.ins-det2022★ 5 cited

Towards a New Generation of Monolithic Active Pixel Sensors

Ankur Chauhan, Manuel Del Rio Viera, Doris Eckstein +16

A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, mor…

physics.ins-det2022★ 6 cited

The Tangerine project: Development of high-resolution 65 nm silicon MAPS

Håkan Wennlöf, Ankur Chauhan, Manuel Del Rio Viera +16

The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a…