most citedEvolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

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cond-mat.mtrl-sci2022★ 1 cited

Evolution of Ge wetting layers growing on smooth and rough Si (001) surfaces: isolated {105} facets as a kinetic factor of stress relaxation

Larisa V. Arapkina, Kirill V. Chizh, Vladimir P. Dubkov +2

The results of STM and RHEED studies of a thin Ge film grown on the Si/Si(001) epitaxial layers with different surface relief are presented. Process of the partial stress relaxatio…