most citedProton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

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physics.ins-det2022★ 13 cited

Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

M. Campajola, F. Di Capua, D. Fiore +2

Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out w…