Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

Abstract

Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.

This is an author-created, un-copyedited version of an article accepted for publication/published in Nuclear Instruments and Methods in Physics Research Section A. The Version of Record is available online at https://doi.org/10.1016/j.nima.2019.162722