Isotropic plasma-thermal atomic layer etching of aluminum nitride using SF${}_6$ plasma and Al(CH${}_3$)${}_3$

Haozhe Wang, Azmain Hossain, David Catherall +1

We report the isotropic plasma atomic layer etching (ALE) of aluminum nitride using sequential exposures of SF${}_6$ plasma and trimethylaluminum (Al(CH${}_3$)${}_3$, TMA). ALE was obser…