RESURF Ga${}_2$O${}_3$-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Junting Chen, Junlei Zhao, Jin Wei +1

Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga${}_2$O${}_3$ devices. In this simulation work, we propose a novel role for $p$-type…