Junting Chen

activity

20222024

most citedOrientation-Dependent Atomic-Scale Mechanism of

β

Ga_{2} O_{3}

Thin Film Epitaxial Growth

6 citations · 7 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2024

RESURF Ga $_{2}$ O $_{3}$ -on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Junting Chen, Junlei Zhao, Jin Wei +1

Heterosubstrates have been extensively studied as a method to improve the heat dissipation of Ga $_{2}$ O $_{3}$ devices. In this simulation work, we propose a novel role for $p$ -type…

cond-mat.mtrl-sci2023★ 6 cited

Orientation-Dependent Atomic-Scale Mechanism of $β$ - $Ga_{2} O_{3}$ Thin Film Epitaxial Growth

Jun Zhang, Junlei Zhao, Junting Chen +1

$β$ - $Ga_{2} O_{3}$ has gained intensive interests of research and application as an ultrawide bandgap semiconductor. Epitaxial growth technique of the $β$ -$\mathrm…

physics.app-ph2022★ 1 cited

Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension

Junting Chen, Junlei Zhao, Sirui Feng +8

Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN sur…

RESURF Ga2​O3​-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Orientation-Dependent Atomic-Scale Mechanism of β-Ga2​O3​ Thin Film Epitaxial Growth

Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension

RESURF Ga $_{2}$ O $_{3}$ -on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Orientation-Dependent Atomic-Scale Mechanism of $β$ - $Ga_{2} O_{3}$ Thin Film Epitaxial Growth