21 citations · 26 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2022★ 5 cited
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier
Pravin Khanal, Bowei Zhou, Magda Andrade +6
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic an…
cond-mat.mtrl-sci2022★ 21 cited
Perpendicular magnetic tunnel junctions with multi-interface free layer
Pravin Khanal, Bowei Zhou, Magda Andrade +8
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy…