C. Richter

most citedX-ray scattering study of GaN nanowires grown on Ti/Al

_{2}

_{3}

by molecular beam epitaxy

2 citations · 3 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2022★ 2 cited

X-ray scattering study of GaN nanowires grown on Ti/Al $_{2}$ O $_{3}$ by molecular beam epitaxy

Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese +5

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al $_{2}$ O $_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scatteri…

cond-mat.mtrl-sci2022★ 1 cited

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In $_{x}$ Ga $_{1 - x}$ N layers by scanning X-ray diffraction microscopy

Carsten Richter, Vladimir M. Kaganer, Armelle Even +5

Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devi…

X-ray scattering study of GaN nanowires grown on Ti/Al2​O3​ by molecular beam epitaxy

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed Inx​Ga1−x​N layers by scanning X-ray diffraction microscopy

X-ray scattering study of GaN nanowires grown on Ti/Al $_{2}$ O $_{3}$ by molecular beam epitaxy

Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In $_{x}$ Ga $_{1 - x}$ N layers by scanning X-ray diffraction microscopy