7 papers
Second order unfitted ghost-FEM for elliptic interface problems with applications to low-dimensional semiconductor devices
Clarissa Astuto, Giovanni Nastasi
We develop an unfitted ghost finite element method for elliptic interface problems with discontinuous diffusion coefficients and apply it to the electrostatic simulation of low-dim…
Low-noise Pauli-consistent ensemble Monte Carlo for graphene with electron-electron scattering
Tigran Zalinyan, Giovanni Nastasi
We investigate Pauli-consistent ensemble Monte Carlo simulations of graphene with explicit intraband electron-electron scattering. To reduce the cost of electron-electron proposal-…
Ballistic electron transport described by a generalized Schrödinger equation
Giulia Elena Aliffi, Giovanni Nastasi, Vittorio Romano
We propose a Schrödinger equation of arbitrary order for modeling charge transport in semiconductors operating in the ballistic regime. This formulation incorporates non-parabolic…
A discontinuous Galerkin approach for simulating graphene-based electron devices via the Boltzmann transport equation
Giovanni Nastasi, Vittorio Romano
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom…
Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
Houssem Rezgui, Giovanni Nastasi, Manuel Marcoux +1
The growing demand for better performance and lower thermal energy dissipation in nanoelectronic devices is the major driving force of the semiconductor industry's quest for future…
Ballistic electron transport described by a fourth-order Schrödinger equation
Giulia Elena Aliffi, Giovanni Nastasi, Vittorio Romano
A fourth-order Schrödinger equation for the description of charge transport in semiconductors in the ballistic regime is proposed with the inclusion of non-parabolic effects in th…