5 papers
Epitaxial growth and semiconductor properties of NiGa2O4 spinel for Ga2O3/NiO interfaces
Kingsley Egbo, Emily M. Garrity, Shivashree Shivamade Gowda +8
Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain u…
Origin of metal-insulator transition in rare-earth Nickelates
Swagata Acharya, Brooks Tellekamp, Jerome Jackson +4
Rare-earth nickelates RNiO3 (R=rare-earth element) exhibit three kinds of phase transitions with decreasing temperature: a structural transition from a pseudo-cubic to a monoclinic…
Low Leakage Ferroelectric Heteroepitaxial AlScN Films on GaN
Keisuke Yazawa, Charles Evans, Elizabeth Dickey +3
Wurtzite (Al,Sc)N ferroelectrics are attractive for microelectronics applications due to their chemical and epitaxial structural compatibility with wurtzite semiconductors such as…
NiGaO interfacial layers in NiO/GaO heterojunction diodes at high temperature
Kingsley Egbo, Emily M. Garrity, William A. Callahan +6
NiO/GaO heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…
Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally
Emily McDonald Garrity, Cheng-Wei Lee, Prashun Gorai +3
As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide…