5 papers
Epitaxial growth and semiconductor properties of NiGa2O4 spinel for Ga2O3/NiO interfaces
Kingsley Egbo, Emily M. Garrity, Shivashree Shivamade Gowda +8
Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain u…
Emerging ultra-wide band gap semiconductors for future high-frequency electronics
Emily M. Garrity, Theodora Ciobanu, Andriy Zakutayev +1
To meet the growing demands of advanced electronic systems, next-generation power and RF semiconductor devices must operate efficiently at higher power levels and switching frequen…
Stability, growth, and doping of In(Si, Ge)O as promising n-type wide-gap semiconductors
Cheng-Wei Lee, Kingsley Egbo, Emily Garrity +4
In this paper we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of InXO$_{7…
NiGaO interfacial layers in NiO/GaO heterojunction diodes at high temperature
Kingsley Egbo, Emily M. Garrity, William A. Callahan +6
NiO/GaO heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…
Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally
Emily McDonald Garrity, Cheng-Wei Lee, Prashun Gorai +3
As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide…