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20202025
most citedPicosecond Switching of Optomagnetic Tunnel Junctions

61 citations · 146 across the 15 of their papers we have counts for

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6 papers · 1 filter

cond-mat.mes-hall2024★ 1 cited

Picosecond all-optical switching of Co/Gd based synthetic ferrimagnets

Pingzhi Li, Thomas J. Kools, Hamed Pezeshki +8

Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step pro…

cond-mat.mes-hall2023★ 6 cited

Ultrafast single-pulse all-optical switching in synthetic ferrimagnetic Tb/Co/Gd multilayers

Julian Hintermayr, Pingzhi Li, Roy Rosenkamp +6

In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular…

cond-mat.mes-hall2023

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

Shen Li, Xiaoyang Lin, Pingzhi Li +6

Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future hig…

cond-mat.mes-hall2022★ 13 cited

Enhancing All-Optical Switching of Magnetization by He Ion Irradiation

Pingzhi Li, Johannes W. van der Jagt, Maarten Beens +8

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other…

cond-mat.mes-hall2022★ 5 cited

Ultrafast racetrack based on compensated Co/Gd-based synthetic ferrimagnet with all-optical switching

Pingzhi Li, Thomas J. Kools, Reinoud Lavrijsen +1

Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high po…

cond-mat.mes-hall2020★ 61 cited

Picosecond Switching of Optomagnetic Tunnel Junctions

Luding Wang, Houyi Cheng, Pingzhi Li +7

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolut…