activity
20202025
most citedPicosecond Switching of Optomagnetic Tunnel Junctions

61 citations · 146 across the 15 of their papers we have counts for

collaborators

15 papers

physics.optics2025

Demonstration of on-chip all-optical switching of magnetization in integrated photonics

Pingzhi Li, Gijs W. A. Simons, Tianyu Zhang +7

Ultrafast all-optical magnetization switching (AOS) holds great promise for nextgeneration spintronic memory and hybrid spintronic-photonic systems. However, most implementations t…

cond-mat.mes-hall2024★ 1 cited

Picosecond all-optical switching of Co/Gd based synthetic ferrimagnets

Pingzhi Li, Thomas J. Kools, Hamed Pezeshki +8

Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step pro…

physics.app-ph2024★ 4 cited

Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets

Shen Li, Mouad Fattouhi, Tianxun Huang +10

The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin…

physics.optics2024★ 1 cited

Integrated magneto-photonic non-volatile multi-bit memory

Hamed Pezeshki, Pingzhi Li, Reinoud Lavrijsen +2

We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions w…

cond-mat.mes-hall2023★ 6 cited

Ultrafast single-pulse all-optical switching in synthetic ferrimagnetic Tb/Co/Gd multilayers

Julian Hintermayr, Pingzhi Li, Roy Rosenkamp +6

In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular…

cond-mat.mtrl-sci2023★ 4 cited

Aging and passivation of magnetic properties in Co/Gd bilayers

T. J. Kools, Y. L. W. van Hees, K. Poissonnier +5

Synthetic ferrimagnets based on Co and Gd bear promise for directly bridging the gap between volatile information in the photonic domain and non-volatile information in the magneti…

cond-mat.mes-hall2023

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

Shen Li, Xiaoyang Lin, Pingzhi Li +6

Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered as one of the most promising candidates for future hig…

cond-mat.mtrl-sci2023

Strain effects on magnetic compensation and spin reorientation transition of Co/Gd synthetic ferrimagnets

Giovanni Masciocchi, Thomas J. Kools, Pingzhi Li +5

Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast…

physics.optics2022★ 23 cited

Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory

Hamed Pezeshki, Pingzhi Li, Reinoud Lavrijsen +4

We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrima…

physics.optics2022★ 15 cited

Optical Reading of Nanoscale Magnetic Bits in an Integrated Photonic Platform

Hamed Pezeshki, Pingzhi Li, Reinoud Lavrijsen +2

In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic…

cond-mat.mes-hall2022★ 13 cited

Enhancing All-Optical Switching of Magnetization by He Ion Irradiation

Pingzhi Li, Johannes W. van der Jagt, Maarten Beens +8

All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other…

physics.app-ph2022★ 1 cited

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Zilu Wang, Pingzhi Li, Yuxuan Yao +6

Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently…

cond-mat.mes-hall2022★ 5 cited

Ultrafast racetrack based on compensated Co/Gd-based synthetic ferrimagnet with all-optical switching

Pingzhi Li, Thomas J. Kools, Reinoud Lavrijsen +1

Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high po…

physics.app-ph2021★ 12 cited

Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet

Pingzhi Li, Mark J. G. Peeters, Youri L. W. van Hees +2

A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mech…

cond-mat.mes-hall2020★ 61 cited

Picosecond Switching of Optomagnetic Tunnel Junctions

Luding Wang, Houyi Cheng, Pingzhi Li +7

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolut…