Yuanyuan Zhang

most citedFirst-principles study of oxygen vacancy defects in orthorhombic Hf

_{0.5}

_{0.5}

_{2}

/SiO

_{2}

/Si gate stack

24 citations · 28 across the 2 of their papers we have counts for

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cond-mat.mtrl-sci2022★ 24 cited

First-principles study of oxygen vacancy defects in orthorhombic Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{2}$ /Si gate stack

Junshuai Chai, Hao Xu, Jinjuan Xiang +9

The gate defect of the ferroelectric HfO $_{2}$ -based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an ef…

First-principles study of oxygen vacancy defects in orthorhombic Hf0.5​Zr0.5​O2​/SiO2​/Si gate stack

First-principles study of oxygen vacancy defects in orthorhombic Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{2}$ /Si gate stack