Yuanyuan Zhang

most citedFirst-principles study of oxygen vacancy defects in orthorhombic Hf

_{0.5}

_{0.5}

_{2}

/SiO

_{2}

/Si gate stack

24 citations · 24 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2022★ 24 cited

First-principles study of oxygen vacancy defects in orthorhombic Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{2}$ /Si gate stack

Junshuai Chai, Hao Xu, Jinjuan Xiang +9

The gate defect of the ferroelectric HfO $_{2}$ -based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an ef…

physics.app-ph2020

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

Yuanyuan Zhang, Xiaoqing Sun, Junshuai Chai +6

This paper investigates the thermodynamic driving force of transient negative capacitance (NC) in the series circuit of the resistor and ferroelectric capacitor (R-FEC). We find th…

First-principles study of oxygen vacancy defects in orthorhombic Hf0.5​Zr0.5​O2​/SiO2​/Si gate stack

Thermodynamic driving force of transient negative capacitance of ferroelectric capacitors

First-principles study of oxygen vacancy defects in orthorhombic Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ /SiO $_{2}$ /Si gate stack