236 citations · 344 across the 6 of their papers we have counts for
6 papers
Virtual IED sensor for df rf CCP discharges
M. Bogdanova, D. Lopaev, T. Rakhimova +3
Ion-assisted surface processes are the basis of modern plasma processing. Ion energy distribution (IED) control is critical for precise material modification, especially in atomic-…
Exploring the electron density in plasma induced by EUV radiation: II. Numerical studies in argon and hydrogen
D. I. Astakhov, W. J. Goedheer, C. J. Lee +8
We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by micro…
Numerical and experimental studies of the carbon etching in EUV-induced plasma
D. I. Astakhov, W. J. Goedheer, C. J. Lee +6
We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced p…
Plasma probe characteristics in low density hydrogen pulsed plasmas
D. I. Astakhov, W. J. Goedheer, C. J. Lee +6
Probe theories are only applicable in the regime where the probe's perturbation of the plasma can be neglected. However, it is not always possible to know, a priori, that a particu…
Characterization of carbon contamination under ion and hot atom bombardment in a tin-plasma extreme ultraviolet light source
A Dolgov, D Lopaev, C J Lee +4
Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiati…
Comparison of H2 and He carbon cleaning mechanisms in extreme ultraviolet induced and surface wave discharge plasmas
A Dolgov, D Lopaev, T Rachimova +6
Cleaning of contamination of optical surfaces by amorphous carbon (a-C) is highly relevant for extreme ultraviolet (EUV) lithography. We have studied the mechanisms for a-C removal…