372 citations · 489 across the 6 of their papers we have counts for
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Scaleability of dielectric susceptibility with the number of layers and additivity of ferroelectric polarization in van der Waals semiconductors
Fábio Ferreira, Vladimir Enaldiev, Vladimir Fal'ko
We study the dielectric response of few layered crystals of various transition metal dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN). We showed that the out-of-plane polar…
Self-organised quantum dots in marginally twisted MoSe/WSe and MoS/WS bilayers
V. V. Enaldiev, F. Ferreira, J. G. McHugh +1
Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, ) bilayers of nearly lattice-m…
A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors
V. V. Enaldiev, F. Ferreira, V. I. Fal'ko
Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternati…
Interfacial ferroelectricity in marginally twisted 2D semiconductors
Astrid Weston, Eli G Castanon, Vladimir Enaldiev +19
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semico…
Band energy landscapes in twisted homobilayers of transition metal dichalcogenides
Fábio Ferreira, Samuel Magorrian, Vladimir Enaldiev +2
Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heter…