Area-selective deposition and B $\delta$-doping of Si(100) with BCl${}_3$

K. J. Dwyer, S. Baek, Azadeh Farzaneh +3

B-doped $\delta$-layers were fabricated in Si(100) using BCl${}_3$ as a dopant precursor in ultrahigh vacuum. BCl${}_3$ adsorbed readily at room temperature, as revealed by scanning tun…