65 citations · 220 across the 19 of their papers we have counts for
7 papers · 1 filter
All-electrical operation of a Curie-switch at room temperature
Vadym Iurchuk, Oleksii Kozlov, Serhii Sorokin +6
We present all-electrical operation of a FeCr-based Curie switch at room temperature. More specifically, we study the current-induced thermally-driven transition from f…
A strain-controlled magnetostrictive pseudo spin valve
Vadym Iurchuk, Julien Bran, Manuel Acosta +1
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetore…
Optical Writing of Magnetic Properties by Remanent Photostriction
V. Iurchuk, D. Schick, J. Bran +13
We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/…
Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[ZrTi]O
V. Iurchuk, B. Doudin, J. Bran +1
Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically wo…
Multi-state and non-volatile control of graphene conductivity with surface electric fields
V. Iurchuk, H. Majjad, F. Chevrier +4
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand…
Multistate nonvolatile straintronics controlled by a lateral electric field
V. Iurchuk, B. Doudin, B. Kundys
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant stra…
Subcoercive and multilevel ferroelastic remnant states with resistive readout
B. Kundys, V. Iurchuk, C. Meny +2
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical qu…