17 citations · 37 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2021★ 7 cited
Decoupling bulk and surface recombination properties in silicon by depth-dependent carrier lifetime measurements
K. Yokoyama, J. S. Lord, J. Miao +2
Muons, as a bulk probe of materials, have been used to study the depth profile of charge carrier kinetics in Si wafers by scanning the muon implantation depth. The photoexcited muo…
cond-mat.mtrl-sci2017★ 17 cited
A new method for measuring excess carrier lifetime in bulk silicon: Photoexcited muon spin spectroscopy
K. Yokoyama, J. S. Lord, J. Miao +2
We have measured the optically injected excess carrier lifetime in silicon using photoexcited muon spin spectroscopy. Positive muons implanted deep in a wafer can interact with the…
physics.ins-det2016★ 13 cited
The new high field photoexcitation muon spectrometer at the ISIS pulsed neutron and muon source
K. Yokoyama, J. S. Lord, P. Murahari +9
A high power pulsed laser system has been installed on the high magnetic field muon spectrometer (HiFi) at the ISIS pulsed neutron and muon source, situated at the STFC Rutherford…