activity
20212026
most citedVoltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application

103 citations · 172 across the 5 of their papers we have counts for

collaborators
Showing 2026Show all

1 paper · 1 filter

cond-mat.mes-hall2026

Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer

K. Fan, S. V. Beek, G. Talmelli +11

We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…