103 citations · 172 across the 5 of their papers we have counts for
5 papers
Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer
K. Fan, S. V. Beek, G. Talmelli +11
We present micromagnetic simulations and experiments on voltage-assisted field switching in perpendicular magnetic tunnel junctions (MTJs) with a synthetic antiferromagnetic (SAF)…
Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque
Marco Hoffmann, Viola Krizakova, Vaishnavi Kateel +3
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random…
Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Vaishnavi Kateel, Viola Krizakova, Siddharth Rao +10
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memo…
Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque
Viola Krizakova, Marco Hoffmann, Vaishnavi Kateel +5
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of…
Voltage-Gate Assisted Spin-Orbit Torque Magnetic Random Access Memory for High-Density and Low-Power Embedded Application
Y. C. Wu, K. Garello, W. Kim +11
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabl…