most citedOptical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic InO

23 citations · 33 across the 3 of their papers we have counts for

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physics.app-ph2023

7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…

physics.app-ph2021★ 10 cited

Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN

Yuxuan Zhang, Zhaoying Chen, Kaitian Zhang +2

Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is…