23 citations · 33 across the 3 of their papers we have counts for
3 papers
7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management
Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7
Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…
Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic InO
Megan Stokey, Rafal Korlacki, Sean Knight +8
A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic…
Laser-Assisted Metalorganic Chemical Vapor Deposition of GaN
Yuxuan Zhang, Zhaoying Chen, Kaitian Zhang +2
Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is…