activity
20202023
most citedEnhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

41 citations · 120 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.str-el2023

Competition of electronic correlation and reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures

Xueyan Wang, Lin Sun, Chen Ye +10

Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional system…

cond-mat.supr-con2022★ 10 cited

Phase diagram of superconducting vortex ratchet motion in a superlattice with noncentrosymmetry

Shengyao Li, Lijuan Zhang, Ke Huang +8

Ratchet motion of superconducting vortices, which is a directional flow of vortices in superconductors, is highly useful for exploring quantum phenomena and developing superconduct…

cond-mat.mtrl-sci2022★ 3 cited

Room temperature charge-to-spin conversion from q-2DEG at SrTiO3-based interfaces

Utkarsh Shashank, Angshuman Deka, Chen Ye +6

Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient…

cond-mat.mtrl-sci2022

Layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr

Chen Ye, Cong Wang, Qiong Wu +11

Magnetic van der Waals (vdW) materials offer a fantastic platform to investigate and exploit rich spin configurations stabilized in reduced dimensions. One tantalizing magnetic ord…

cond-mat.mes-hall2022★ 26 cited

Nonreciprocal transport in a bilayer of MnBi2Te4 and Pt

Chen Ye, Xiangnan Xie, Wenxing Lv3 +16

MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel m…

physics.app-ph2021★ 17 cited

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

M. H. Shao, H. F. Liu, R. He +13

Ferroelectricity, especially in hafnia-based thin films at nanosizes, has been rejuvenated in the fields of low-power, nonvolatile and Si-compatible modern memory and logic applica…

cond-mat.mtrl-sci2021★ 41 cited

Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

Kun Han, Liang Wu, Yu Cao +9

Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of…

cond-mat.str-el2020★ 23 cited

Tailoring magnetic order via atomically stacking 3d/5d electrons

Ke Huang, Liang Wu, Maoyu Wang +18

The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy…