G. Hallais

activity

20142026

most citedSTEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si

_{1 - x}

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10 citations · 16 across the 7 of their papers we have counts for

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Showing 2022Show all

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cond-mat.mtrl-sci2022★ 10 cited

STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si $_{1 - x}$ B $_{x}$

G. Hallais, G. Patriarche, L. Desvignes +2

We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribu…

cond-mat.mtrl-sci2022

Evidence of boron pairs in highly boron laser doped silicon

Léonard Desvignes, Francesca Chiodi, Géraldine Hallais +5

Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was ma…

STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si1−x​ Bx​

Evidence of boron pairs in highly boron laser doped silicon

STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si $_{1 - x}$ B $_{x}$