10 citations · 16 across the 7 of their papers we have counts for
7 papers
Unlocking extreme doping and strain in epitaxial monocrystalline silicon
Léonard Desvignes, Dominique Débarre, Ludovic Largeau +8
Hyperdoping, overcoming the solubility limit of dopants in a crystalline semiconductor, is a fertile method for the enhancement of the electrical, structural and optical devices' p…
Micro-crystal GaAs array sub-cells for Si tandem solar cells
James P. Connolly, Ahmed Nejim, Alexandre Jaffré +9
This work reports optical and electronic numerical modelling of a novel emerging structure which is the GaAs nanocrystal on Si tandem solar cell by epitaxial lateral overgrowth, a…
Tuning superconductivity in nanosecond laser annealed boron doped epilayers
S. Nath, I. Turan, L. Desvignes +8
Superconductivity in ultra-doped epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the so…
STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si B
G. Hallais, G. Patriarche, L. Desvignes +2
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribu…
Evidence of boron pairs in highly boron laser doped silicon
Léonard Desvignes, Francesca Chiodi, Géraldine Hallais +5
Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was ma…
Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A
Nicolas T. Fourches, Geraldine Hallais, Charles Renard
CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of…
Laser doping for ohmic contacts in n-type Ge
F. Chiodi, A. D. Chepelianskii, C. Gardes +3
We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the l…