8 papers
Color Centers in Cubic Boron Nitride
William Stenlund, Joel Davidsson, Viktor Ivády +2
Cubic boron nitride (c-BN) is a wide-bandgap semiconductor (WBGS) with potential applications in both power electronics and quantum technologies. Color centers in WBGS can be used…
Demonstration of the ODMR activity of the telecom range ClV center in SiC: a wavefunction theory analysis
Zsolt Benedek, Oscar Bulancea-Lindvall, Joel Davidsson +2
Recently, density functional theory-based high-throughput screening of point defects in 4H-SiC revealed the positively charged chlorine-vacancy (ClV) defect to be a promising quant…
NV-like Defects More Common Than Four-Leaf Clovers: A Perspective on High-Throughput Point Defect Data
Joel Davidsson
Point defects for quantum technologies is an emerging research area, with the nitrogen-vacancy (NV) center in diamond at the forefront. However, how rare are defects with NV-like p…
High-Throughput Exploration of NV-like Color Centers Across Host Materials
Oscar Groppfeldt, Joel Davidsson, Rickard Armiento
Point defects in semiconductors offer a promising platform for advancing quantum technologies due to their localized energy states and controllable spin properties. Prior research…
Native defects and impurities in talcum quasi-2D layers
Gellért Dolecsek, Oscar Bulancea Lindvall, Joel Davidsson +1
Layered semiconductors have recently emerged as capable host materials for novel quantum applications ranging from phonics to sensing. Most studies have focused on artificial layer…
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
Danial Shafizade, Joel Davidsson, Takeshi Ohshima +2
The divacancy comprising two neighboring vacant sites in the SiC lattice is a promising defect for applications in quantum technology. So far, most work is concerned with the divac…