14 citations · 28 across the 7 of their papers we have counts for
4 papers · 1 filter
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices
Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6
Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…
Voltage-tuned anomalous-metal to metal transition in hybrid Josephson junction arrays
S. Sasmal, M. Efthymiou-Tsironi, G. Nagda +5
We report voltage-tuned phase transitions in arrays of hybrid semiconductor-superconductor islands arranged in a square lattice. A double-layer electrostatic gate geometry enables…
Cryogenic Multiplexing with Bottom-Up Nanowires
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle exp…