14 citations · 28 across the 7 of their papers we have counts for
7 papers
Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes
Giulia Meucci, Pinelopi O. Konstantinopoulou, Thies Jansen +15
The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective…
Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires
Giulia Meucci, Dags Olšteins, Damon J. Carrad +6
Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for…
: A Method for Extracting the Density Dependent Mobility in Two-Terminal Nanodevices
Christian E. N. Petersen, Damon J. Carrad, Thierry Désiré +6
Measuring carrier mobility as a function of the carrier density in semiconductors using Hall effect is the gold standard for quantifying scattering mechanisms. However, for nanostr…
Voltage-tuned anomalous-metal to metal transition in hybrid Josephson junction arrays
S. Sasmal, M. Efthymiou-Tsironi, G. Nagda +5
We report voltage-tuned phase transitions in arrays of hybrid semiconductor-superconductor islands arranged in a square lattice. A double-layer electrostatic gate geometry enables…
Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-sca…
Cryogenic Multiplexing with Bottom-Up Nanowires
Dāgs Olšteins, Gunjan Nagda, Damon J. Carrad +5
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle exp…
Selective Area Growth Rates of III-V Nanowires
Martin Espiñeira Cachaza, Anna Wulff Christensen, Daria Beznasyuk +6
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, an…