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20162026
most citedAsymmetry-induced resistive switching in Ag-AgS-Ag memristors enabling a simplified atomic-scale memory design

44 citations · 86 across the 8 of their papers we have counts for

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cond-mat.mes-hall2026

Voltage-driven transition from steady-state fluctuations to phase-transition noise in nanoscale VO devices

Sebastian Werner Schmid, Zoltán Balogh, Botond Sánta +6

We investigate the electrically driven metal-to-insulator transition (MIT) in nanoscale vanadium dioxide (VO) Mott memristor through noise spectroscopy and two-dimensional resi…