44 citations · 86 across the 8 of their papers we have counts for
9 papers
Voltage-driven transition from steady-state fluctuations to phase-transition noise in nanoscale VO devices
Sebastian Werner Schmid, Zoltán Balogh, Botond Sánta +6
We investigate the electrically driven metal-to-insulator transition (MIT) in nanoscale vanadium dioxide (VO) Mott memristor through noise spectroscopy and two-dimensional resi…
Memristor-Driven Spike Encoding for Fully Implantable Cochlear Implants
Tímea Nóra Török, Roland Kövecs, Ferenc Braun +9
Objective: This work aims to demonstrate a low-power, biomimetic auditory sensing concept for fully implantable cochlear implants. The approach draws inspiration from the frequency…
VO oscillator circuits optimized for ultrafast, 100 MHz-range operation
Zsigmond Pollner, Tímea Nóra Török, László Pósa +9
Oscillating neural networks are promising candidates for a new computational paradigm, where complex optimization problems are solved by physics itself through the synchronization…
Picosecond Femtojoule Resistive Switching in Nanoscale VO Memristors
S. W. Schmid, L. Pósa, T. N. Török +8
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiti…
Neural information processing and time-series prediction with only two dynamical memristors
Dániel Molnár, Tímea Nóra Török, János Volk +9
Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers la…
Voltage-time dilemma and stochastic threshold voltage variation in pure silver atomic switches
Anna Nyáry, Zoltán Balogh, Máté Vigh +3
The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallizati…
1/f noise spectroscopy and noise tailoring of nanoelectronic devices
Zoltán Balogh, Gréta Mezei, László Pósa +3
In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and sing…
Asymmetry-induced resistive switching in Ag-AgS-Ag memristors enabling a simplified atomic-scale memory design
A. Gubicza, D. Zs. Manrique, L. Pósa +4
Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity…
Precursor configurations and post-rupture evolution of Ag-CO-Ag single-molecule junctions
Zoltán Balogh, Dávid Visontai, Péter Makk +5
Experimental correlation analysis and first-principles theory are used to probe the structure and evolution of Ag-CO-Ag single-molecule junctions, both before the formation, and af…