most citedThe influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM

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cond-mat.mtrl-sci2021

A Photonic Atom Probe Analysis of the Effect of Extended and Point Defects on the Luminescence of InGaN/GaN Quantum Dots

I. Dimkou, J. Houard, N. Rochat +6

We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 la…