24 citations · 41 across the 3 of their papers we have counts for
3 papers
physics.app-ph2022★ 17 cited
The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM
Bruno C da Silva, Zahra S Momtaz, Lucas Bruas +4
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of diffe…
physics.app-ph2022★ 24 cited
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…
cond-mat.mtrl-sci2021
A Photonic Atom Probe Analysis of the Effect of Extended and Point Defects on the Luminescence of InGaN/GaN Quantum Dots
I. Dimkou, J. Houard, N. Rochat +6
We report a correlative microscopy study of a sample containing three stacks of InGaN/GaN quantum dots (QDs) grown at different substrate temperature, each stack consisting of 3 la…