21 citations · 26 across the 2 of their papers we have counts for
Showing physics.app-phShow all
2 papers · 1 filter
physics.app-ph2022★ 5 cited
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
physics.app-ph2021★ 21 cited
Vertical GaN Devices: Process and Reliability
Shuzhen You, Karen Geens, Matteo Borga +14
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible te…