21 citations · 36 across the 3 of their papers we have counts for
3 papers
physics.app-ph2022★ 5 cited
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
physics.app-ph2022★ 10 cited
Study and characterization of GaN MOS capacitors: planar versus trench topographies
K. Mukherjee, C. De Santi, S. You +9
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of…
physics.app-ph2021★ 21 cited
Vertical GaN Devices: Process and Reliability
Shuzhen You, Karen Geens, Matteo Borga +14
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible te…