1 citations · 1 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2026
Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios
Xu Yang, Sheng Zhang, Ke Wei +4
We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3…
physics.app-ph2021★ 1 cited
A Novel Strategy for GaN-on-Diamond Device with a High Thermal Boundary Conductance
Fengwen Mu, Bin Xu, Xinhua Wang +11
To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but…