126 citations · 150 across the 5 of their papers we have counts for
5 papers
Ultra-clean interface between high k dielectric and 2D MoS2
Han Yan, Yan Wang, Yang Li +8
Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the inte…
Orientation-dependent surface radiation damage in -Ga2O3 explored by multiscale atomic simulations
Taiqiao Liu, Zeyuan Li, Junlei Zhao +7
Ultrawide bandgap semiconductor -Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is u…
Moire flat bands in twisted 2D hexagonal vdW material
Qiaoling Xu, Yuzheng Guo, Lede Xian
Moire superlattices in twisted bilayer graphene (TBG) and its derived structures can host exotic correlated quantum phenomena because the narrow moire flat minibands in those syste…
A new opportunity for two-dimensional van der Waals heterostructures: making steep-slope transistors
Juan Lv, Jing Pei, Yuzheng Guo +2
The use of a foreign metallic cold source (CS) has recently been proposed as a promising approach toward the steep-slope field-effect-transistor (FET). In addition to the selection…
Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment
Zefei Wu, Yanqing Guo, Yuzheng Guo +13
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge…