3 papers
cond-mat.mtrl-sci2025
Ultra-clean interface between high k dielectric and 2D MoS2
Han Yan, Yan Wang, Yang Li +8
Atomically thin transition metal dichalcogenides (TMDs) are promising candidates for next-generation transistor channels due to their superior scaling properties. However, the inte…
cond-mat.mtrl-sci2024
Orientation-dependent surface radiation damage in -Ga2O3 explored by multiscale atomic simulations
Taiqiao Liu, Zeyuan Li, Junlei Zhao +7
Ultrawide bandgap semiconductor -Ga2O3 holds extensive potential for applications in high-radiation environments. One of the primary challenges in its practical application is u…
cond-mat.mtrl-sci2021
Moire flat bands in twisted 2D hexagonal vdW material
Qiaoling Xu, Yuzheng Guo, Lede Xian
Moire superlattices in twisted bilayer graphene (TBG) and its derived structures can host exotic correlated quantum phenomena because the narrow moire flat minibands in those syste…