activity
20212023
most citedTransient Characteristics of -GaO Nanomembrane Schottky Barrier Diodes on Various Substrates

5 citations · 7 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2023★ 1 cited

XPS analysis of molecular contamination and sp2 amorphous carbon on oxidized (100) diamond

Ricardo Vidrio, Daniel Vincent, Benjamin Bachman +11

The efficacy of oxygen (O) surface terminations on diamond is an important factor for the performance and stability for diamond-based quantum sensors and electronics. Given the wid…

physics.app-ph2022★ 5 cited

Transient Characteristics of -GaO Nanomembrane Schottky Barrier Diodes on Various Substrates

Junyu Lai, Jung-Hun Seo

In this paper, a transient delayed rising and fall time of -GaO NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyim…

cond-mat.mtrl-sci2021

Investigation of the Imperfect Interface at the Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer

Md Nazmul Hasan, Yixiong Zheng, Junyu Lai +6

The structure property of non-ideal Si/GaAs heterostructures that were integrated with the ultra-thin oxide (UO) tunneling interfacial layer has been systematically investigated. S…

cond-mat.mes-hall2021★ 1 cited

Theoretical Prediction of Heterogeneous Integration of Dissimilar Semiconductor with Various Ultra-Thin Oxides and 2D Materials

Md Nazmul Hasan, Chenxi Li, Junyu Lai +1

In this paper, we have built a numerical p-n Si/GaAs heterojunction model using a quantum-mechanical tunneling theory with various quantum tunneling interfacial materials including…

cond-mat.mtrl-sci2021

Electrical and Thermal Property of Si/GaAs Heterojunction Formed by Ultra-Thin Oxide Interfacial Layer

Md Nazmul Hasan, Yixiong Zheng, Junyu Lai +6

We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray phot…