Transient Characteristics of $\beta$-Ga${}_2$O${}_3$ Nanomembrane Schottky Barrier Diodes on Various Substrates

Abstract

In this paper, a transient delayed rising and fall time of $\beta$-Ga${}_2$O${}_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under a different temperature condition. The devices exhibited noticeably less-delayed turn-on-/off- the transient time when $\beta$-Ga${}_2$O${}_3$ NMs SBDs were transfer-printed on a high-k substrate. Furthermore, a relationship between the $\beta$-Ga${}_2$O${}_3$ NM thicknesses and their transient characteristics were systematically investigated and found that phonon scattering plays an important role in heat dissipation as the thickness of $\beta$-Ga${}_2$O${}_3$ NMs get thinner which is also verified by the Multiphysics simulator. Overall, our result reveals the impact of various substrates with different thermal properties and different \b{eta}- Ga2O3 NMs thickness with the performance of $\beta$-Ga${}_2$O${}_3$ NMs based devices. Hence, these results can guide further efforts us to optimize the performance of future $\beta$-Ga${}_2$O${}_3$ devices by maximizing heat dissipation from the $\beta$-Ga${}_2$O${}_3$ layer.

References in corpus (4)

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• Thermodynamic Studies of \b{eta}-Ga2O3 Nanomembrane Field-Effect Transistors on a Sapphire Substrate
• Large-Size Free-Standing Single-crystal b-Ga2O3 Membranes Fabricated by Hydrogen Implantation and Lift-Off
• Temperature Dependent Current Dispersion Study in $\beta$-Ga${}_2$O${}_3$ FETs Using Sub-Microsecond Pulsed IV Characteristics