85 citations · 115 across the 5 of their papers we have counts for
3 papers · 1 filter
Temperature and Electron Concentration Dependences of 1/f Noise in HgCdTe -- Evidence for a Mobility Fluctuations Mechanism
Adil Rehman, Volodymyr Petriakov, Ivan Yahniuk +9
HgCdTe is a unique material with the band-gap tunable by the temperature, pressure, and cadmium content in a wide range, from 1.6 eV to inverted band-gap of -0.3 eV. Th…
Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism
Adil Rehman, Juan Antonio Delgado Notario, Juan Salvador Sanchez +6
The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in met…
Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
A. Mohammadzadeh, A. Rehman, F. Kargar +5
We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with th…