9 papers
On the channel noise in InP HEMTs from 4 K to 300 K
Junjie Li, Justin H. Chen, Austin J. Minnich +1
The InP high-electron-mobility transistor (HEMT) is indispensable for low-noise amplifiers (LNAs) in radio astronomy and quantum computing. The composition of the $\mathrm{In_{x}Ga…
Characterization of ultrathin nickel films deposited by thermal laser evaporation
David S. Catherall, Yifei Yan, Finley B. Donachie +2
Thermal laser evaporation is a physical vapor deposition technique of increasing interest because of its ability to evaporate essentially any solid element, even the most refractor…
Directional atomic layer etching of MgO-doped lithium niobate using Br-based plasma
Ivy I. Chen, Mariya Ezzy, Emily Hsue-Chi Shi +8
Lithium niobate (LiNbO, LN) is a nonlinear optical material of high interest for integrated photonics with applications ranging from optical communications to quantum informati…
Investigation of Real-Space Transfer Noise in InP Quantum Wells
Jiayin Zhang, Anthony J. Ardizzi, Kieran A. Cleary +1
Indium phosphide (InP) high electron-mobility transistors (HEMTs) are widely used in many fields such as quantum computing because of their unparalleled microwave noise performance…
Variable-temperature attenuator calibration method for on-wafer microwave noise characterization of low-noise amplifiers
Anthony J. Ardizzi, Jiayin Zhang, Akim A. Babenko +2
Low-noise cryogenic microwave amplifiers are widely used in applications such as radio astronomy and quantum computing. On-wafer noise characterization of cryogenic low-noise trans…
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas
Mete M. Bayrak, Anthony J. Ardizzi, Sadhvikas Addamane +2
The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer…