activity
20152026
most citedElectrical resistance of individual defects at a topological insulator surface

50 citations · 207 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2026

A miniature evaporator for in-operando deposition of isolated atoms in a low-temperature scanning tunneling microscope

Jeongmin Oh, Hermann Osterhage, Vasily Cherepanov +5

Depositing dilute atomic ensembles onto cold samples is challenging in low-temperature scanning tunneling microscopes (STM) because radiation shields and restricted internal geomet…

cond-mat.mes-hall2024

Imaging the transition from diffusive to Landauer resistivity dipoles

Serhii Kovalchuk, David Kämpfer, Jonathan K. Hofmann +6

A point-like defect in a uniform current-carrying conductor induces a dipole in the electrochemical potential, which counteracts the original transport field. If the mean free path…

cond-mat.mes-hall2022★ 10 cited

Probing edge state conductance in ultra-thin topological insulator films

Arthur Leis, Michael Schleenvoigt, Kristof Moors +8

Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in whic…

cond-mat.mes-hall2022★ 5 cited

Nanoscale tip positioning with a multi-tip scanning tunneling microscope using topography images

A. Leis, V. Cherepanov, B. Voigtländer +1

Multi-tip scanning tunneling microscopy (STM) is a powerful method to perform charge transport measurements at the nanoscale. With four STM tips positioned on the surface of a samp…

cond-mat.mes-hall2021

Lifting the spin-momentum locking in ultra-thin topological insulator films

Arthur Leis, Michael Schleenvoigt, Vasily Cherepanov +6

Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinne…

physics.ins-det2021★ 21 cited

A millikelvin scanning tunneling microscope in ultra-high vacuum with adiabatic demagnetization refrigeration

Taner Esat, Peter Borgens, Xiaosheng Yang +5

We present the design and performance of an ultra-high vacuum (UHV) scanning tunneling microscope (STM) that uses adiabatic demagnetization of electron magnetic moments for control…

cond-mat.mes-hall2019★ 7 cited

Parasitic conduction channels in topological insulator thin films

Sven Just, Felix Lüpke, Vasily Cherepanov +2

Thin films of topological insulators (TI) usually exhibit multiple parallel conduction channels for the transport of electrical current. Beside the topologically protected surface…

cond-mat.mes-hall2018★ 4 cited

Surface structures of tellurium on Si(111)-(7x7) studied by low-energy electron diffraction and scanning tunneling microscopy

Felix Lüpke, Jiří Doležal, Vasily Cherepanov +3

The Te-covered Si(111) surface has received recent interest as a template for the epitaxy of van der Waals (vdW) materials, e.g. BiTe. Here, we report the formation of a Te…

physics.ins-det2018★ 2 cited

Low Vibration Laboratory with a Single-Stage Vibration Isolation for Microscopy Applications

Bert Voigtländer, Peter Coenen, Vasily Cherepanov +3

The construction and the vibrational performance of a low vibration laboratory for microscopy applications comprising a 100 ton floating foundation supported by passive pneumatic i…

physics.ins-det2017★ 14 cited

Four-point probe measurements using current probes with voltage feedback to measure electric potentials

F. Lüpke, D. Cuma, S. Korte +2

We present a four-point probe resistance measurement technique which uses four equivalent current measuring units, resulting in minimal hardware requirements and corresponding sour…

cond-mat.mes-hall2017★ 50 cited

Electrical resistance of individual defects at a topological insulator surface

Felix Lüpke, Markus Eschbach, Tristan Heider +10

Three-dimensional topological insulators host surface states with linear dispersion, which manifest as a Dirac cone. Nanoscale transport measurements provide direct access to the t…

cond-mat.mes-hall2016★ 20 cited

Surface Conductivity of Si(100) and Ge(100) Surfaces Determined from Four-Point Transport Measurements Using an Analytical N-Layer Conductance Model

Sven Just, Helmut Soltner, Stefan Korte +2

An analytical N-layer model for charge transport close to a surface is derived from the solution of Poisson's equation and used to describe distance-dependent electrical four-point…

cond-mat.mes-hall2015★ 29 cited

Scanning tunneling potentiometry implemented into a multi-tip setup by software

F. Lüpke, S. Korte, V. Cherepanov +1

We present a multi-tip scanning tunneling potentiometry technique that can be implemented into existing multi-tip scanning tunneling microscopes without hardware changes. The resul…

cond-mat.mes-hall2015★ 45 cited

Surface and Step Conductivities on Si(111) Surfaces

Sven Just, Marcus Blab, Stefan Korte +3

Four-point measurements using a multi-tip scanning tunneling microscope (STM) are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first…