236 citations · 275 across the 8 of their papers we have counts for
8 papers
Ultralong Octupole Moment Switching Driven by Twin Topological Spin
Shijie Xu, Zhizhong Zhang, Yan Huang +10
Spintronics has emerged as a revolutionary frontier in the pursuit of faster, more energy-efficient, and technologically advanced electronics.
Large Anomalous Hall Effect in a Noncoplanar Magnetic Heterostructure
Anke Song, Jine Zhang, Yequan Chen +15
The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. How…
Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure
Shijie Xu, Yan Huang, Farzad Mahfouzi +15
As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consu…
Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction
Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi +14
Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the exte…
Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient
Zhenyi Zheng, Yue Zhang, Victor Lopez-Dominguez +15
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switchin…
Ultra-Fast Ferrimagnetic All Spin Logic Device
Yue Zhang, Zhizhong Zhang, Zhenyi Zheng +7
All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic in…
Domain Wall Motion Driven by Laplace Pressure in CoFeB-MgO Nanodots with Perpendicular Anisotropy
Yu Zhang, Xueying Zhang, Nicolas Vernier +8
We have studied the magnetization reversal of CoFeB-MgO nanodots with perpendicular anisotropy for size ranging from w=400 nm to 1 μm. Contrary to previous experiments, the switchi…
Perspectives of Racetrack Memory for Large-Capacity On-Chip Memory: From Device to System
Yue Zhang, Chao Zhang, Jiang Nan +6
Current-induced domain wall motion (CIDWM) is regarded as a promising way towards achieving emerging high-density, high-speed and low-power non-volatile devices. Racetrack memory i…