161 citations · 526 across the 9 of their papers we have counts for
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Toward the intrinsic limit of topological insulator Bi2Se3
Jixia Dai, Damien West, Xueyun Wang +5
Combining high resolution scanning tunneling microscopy and first principle calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial…
Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering
Nikesh Koirala, Matthew Brahlek, Maryam Salehi +11
Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport ha…
Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process
Jixia Dai, Wenbo Wang, Matthew Brahlek +4
High quality thin films of topological insulators (TI) such as Bi2Se3 have been successfully synthesized by molecular beam epitaxy (MBE). Although the surface of MBE films can be p…