489 citations · 1.2k across the 5 of their papers we have counts for
5 papers
Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy study
Patricia Almeida Carvalho, Annett Thørgesen, Quanbao Ma +9
Boron (B) has the potential for generating an intermediate band in cubic silicon carbide (3C-SiC), turning this material into a highly efficient absorber for single-junction solar…
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
David J. Christle, Paul V. Klimov, Charles F. de las Casas +11
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optic…
Puddle-induced resistance oscillations in the breakdown of the graphene quantum Hall effect
M. Yang, O. Couturaud, W. Desrat +11
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The quantized plateau appears from fields $B…
Quantum Resistance Standard Based on Epitaxial Graphene
Alexander Tzalenchuk, Samuel Lara-Avila, Alexei Kalaboukhov +7
We report development of a quantum Hall resistance standard accurate to a few parts in a billion at 300 mK and based on large area epitaxial graphene. The remarkable precision cons…
SiC Graphene Suitable For Quantum Hall Resistance Metrology
Samuel Lara-Avila, Alexei Kalaboukhov, Sara Paolillo +5
We report the first observation of the quantum Hall effect in epitaxial graphene. The result described in the submitted manuscript fills the yawning gap in the understanding of the…