60 citations · 60 across the 3 of their papers we have counts for
3 papers · 1 filter
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert +7
We critically review recent experimental and theoretical advances on the valence- and structure-mismatched heteroepitaxy of III-V semiconductors on group-IV substrates. We examine…
Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy
Brieg Le Corre, Clothilde Grenèche, Rozenn Bernard +16
Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-pa…
A universal description of III-V/Si epitaxial growth processes
I. Lucci, S. Charbonnier, L. Pedesseau +15
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stag…