activity
20152023
most citedCurrent-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

317 citations · 608 across the 10 of their papers we have counts for

collaborators
Showing 2018 · physics.app-phShow all

1 paper · 2 filters

physics.app-ph2018★ 1 cited

Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

Shouzhong Peng, Xiang Li, Wang Kang +7

Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-…